1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a 1.5v drive pch+pch mosfet TT8J21 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) high power package. 3) low voltage drive. (1.5 v) z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) TT8J21 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) ? 20 10 2.5 10 ? 0.8 ? 10 1.25 w / element 1.0 150 ? 55 to + 150 limits z thermal resistance parameter c / w / total rth(ch-a) symbol limits unit c hannel to ambient ? mounted on a ceramic board 100 c / w / element 125 ? each lead has same dimensions (8) (7) (5) (6) (1) (2) (4) (3) abbreviated symbol : j21 tsst8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4)
TT8J21 data sheet 2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ?? 10 av gs = 10v, v ds = 0v v dd ? 10v r l 4 ? / r g = 10 ? ? 20 ?? vi d = ? 1ma, v gs = 0v ??? 1 av ds = ? 20v, v gs = 0v ? 0.3 ?? 1.0 v v ds = ? 10v, i d = ? 1ma ? 49 68 i d = ? 2.5a, v gs = ? 4.5v ? 68 95 m ? m ? m ? i d = ? 1.2a, v gs = ? 2.5v ? 140 280 i d = ? 0.5a, v gs = ? 1.5v m ? ? 100 150 i d = ? 1.2a, v gs = ? 1.8v 2.5 ?? sv ds = ? 10v, i d = ? 2.5a ? 1270 ? pf v ds = ? 10v ? 100 90 ? pf v gs = 0v ? 9 ? pf f = 1mhz ? 30 ? ns ? 120 ? ns ? 85 ? ns ? 12 ? ns ? 2.5 ? nc ? 2.0 ? nc v gs = ? 4.5v ?? nc i d = ? 2.5a v dd ? 10 v i d = ? 1.2a v gs = ? 4.5v r l 8.3 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ? ? pulsed ??? 1.2 v i s = ? 2.5a, v gs = 0v forward voltage parameter symbol min. typ. max. unit conditions
TT8J21 data sheet 3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z electrical characteristic curves 0 1 2 3 4 0246810 ta=25c pulsed v gs = -1.2v v gs = -1.1v v gs = -1.3v v gs = -1.4v v gs = -10v v gs = 1.8v v gs = -1.5v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 v gs = -1.3v v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v v gs = -1.1v ta=25c pulsed 0.001 0.01 0.1 1 10 0 0.5 1 1.5 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 ta=25c pulsed v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v 10 100 1000 0.1 1 10 v gs = -2.5v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 1 10 100 0.1 1 10 v ds = -10v pulsed ta= -25c ta=25c ta=75c ta=125c 10 100 1000 0.1 1 10 v gs = -1.8v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain fig.5 static drain-source on-state resistance vs. drain fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 forward transfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] 10 100 1000 0.1 1 10 v gs = -1.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ]
TT8J21 data sheet 4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a 0 50 100 150 200 250 300 0246810 ta=25c pulsed i d = -2.5a i d = -1.2a 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 0 2 4 6 8 10 12 14 ta=25c v dd = -10v i d = -2.5a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d (off) ta=25c v dd = -10v v gs =-4.5v r g =10 ? pulsed t d (on) fig.11 reverse drain current vs. sourse-drain voltage fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source fig.14 switching characteristics reverse drain c urrent : -is [a] source-drain voltage : -v sd [v] static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf]
TT8J21 data sheet 5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.01 - rev. a z measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circu it v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit.
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